Click to expand full text
www.DataSheet4U.com
Ordering number : ENA0383
TIG032TS
SANYO Semiconductors
DATA SHEET
TIG032TS
Features
• • • • • •
N-Channel IGBT
Light-Controlling Flash Applications
Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP1 ICP2 dVCE / dt Tch Tstg PW≤1ms PW≤500µs, duty cycle≤0.5%, CM=400µF, VGE=2.5V PW≤500µs, duty cycle≤0.