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Ordering number : ENA1480A
TIG062E8
SANYO Semiconductors
DATA SHEET
TIG062E8
Features
• • • • • • •
N-Channel IGBT
Light-Controlling Flash Applications
Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP1 ICP2 ICP3 dVCE / dt Tch Tstg PW≤1ms CM=150μF, VGE=3V CM=100μF, VGE=3.