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TIG062E8 - N-Channel IGBT

Key Features

  • N-Channel IGBT Light-Controlling Flash.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1480A TIG062E8 SANYO Semiconductors DATA SHEET TIG062E8 Features • • • • • • • N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP1 ICP2 ICP3 dVCE / dt Tch Tstg PW≤1ms CM=150μF, VGE=3V CM=100μF, VGE=3.