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UD2006LS-SB - Low VF Switching Diode

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Features

  • Diffused Junction Silicon Diode Low VF Switching Diode VF=1.4V max. (IF=20A) VRRM=600V trr=60ns (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R. M. S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=32°C Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited, DC 50Hz sine wave 1pulse Conditions.

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Datasheet Details

Part number UD2006LS-SB
Manufacturer Sanyo Semicon Device
File Size 295.68 KB
Description Low VF Switching Diode
Datasheet download datasheet UD2006LS-SB Datasheet
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www.DataSheet.co.kr Ordering number : ENA1846 UD2006LS-SB SANYO Semiconductors DATA SHEET UD2006LS-SB Features • • • Diffused Junction Silicon Diode Low VF Switching Diode VF=1.4V max. (IF=20A) VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=32°C Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited, DC 50Hz sine wave 1pulse Conditions Ratings 600 20 24 180 150 --55 to +150 Unit V A A A °C °C IO IF(RMS) IFSM Tj Tstg Package Dimensions unit : mm (typ) 7510-001 10.0 3.5 7.2 3.2 4.5 Product & Package Information • Package • JEITA, JEDEC 2.
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