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UD2006LS-SB - Low VF Switching Diode

Key Features

  • Diffused Junction Silicon Diode Low VF Switching Diode VF=1.4V max. (IF=20A) VRRM=600V trr=60ns (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R. M. S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=32°C Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited, DC 50Hz sine wave 1pulse Conditions.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
UD2006FR Low VF Switching Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1846 UD2006LS-SB SANYO Semiconductors DATA SHEET UD2006LS-SB Features • • • Diffused Junction Silicon Diode Low VF Switching Diode VF=1.4V max. (IF=20A) VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=32°C Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited, DC 50Hz sine wave 1pulse Conditions Ratings 600 20 24 180 150 --55 to +150 Unit V A A A °C °C IO IF(RMS) IFSM Tj Tstg Package Dimensions unit : mm (typ) 7510-001 10.0 3.5 7.2 3.2 4.5 Product & Package Information • Package • JEITA, JEDEC 2.