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Ordering number : ENA0113
VEC2307
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VEC2307
Features
• • • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
The best suited for load switches. 4V drive. Composite type, facilitaing high-density mounting. Mount height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --30 ±20 --2 --8 0.9 1.