VEC2605 - P-Channel and N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Features

General-Purpose Switching Device.

Sanyo Semicon Device

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Datasheet Details

Part number	VEC2605
Manufacturer	Sanyo Semicon Device
File Size	52.21 KB
Description	P-Channel and N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Datasheet	VEC2605 Datasheet
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Ordering number : ENN8197 VEC2605 P-Channel and N-Channel Silicon MOSFET VEC2605 Features • • General-Purpose Switching Device Applications • • Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 2.5V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions P-channel N-channel 20 ±10 3 12 0.

Published: Sep 24, 2005 |