VEC2822
Key Features
- MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET]
- Low ON-resistance
- Ultrahigh-speed switching.
- 1.8V drive. [SBD]
- Low switching noise.
- Low leakage current and high reliability due to planar structure.
