Datasheet4U Logo Datasheet4U.com

2SB1664 - PNP Epitaxial Planar Silicon Darlington Transistor

Key Features

  • High DC current gain. Large current capacity and wide ASO. Low saturation voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings --110 --100 --6 --8 --12 35 150 --55 to +150 Unit V V V A A W °C °C El.

📥 Download Datasheet

Datasheet Details

Part number 2SB1664
Manufacturer Sanyo Semicon
File Size 62.34 KB
Description PNP Epitaxial Planar Silicon Darlington Transistor
Datasheet download datasheet 2SB1664 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB166040ML SCHOTTKY BARRIER DIODE CHIPS Silan Microelectronics Joint-stock
2SB166100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS Silan Microelectronics Joint-stock
2SB1667 Silicon PNP Transistor Toshiba Semiconductor
2SB1667 Silicon PNP Triple Diffused Type Transistor Guangdong Kexin Industrial
2SB1668 Power Transistor Rohm

Other Datasheets by Sanyo Semicon

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : EN8528 2SB1664 www.DataSheet4U.com SANYO Semiconductors DATA SHEET 2SB1664 Applications • PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features • • • High DC current gain. Large current capacity and wide ASO. Low saturation voltage.