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Ordering number : ENN7271
2SJ628
P-Channel Silicon MOSFET
2SJ628
Ultrahigh-Speed Switching Applications
Preliminary Features
• • •
Package Dimensions
unit : mm 2062A
[2SJ628]
4.5 1.6 1.5
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
0.5 3 1.5 2 3.0
(Bottom view)
1
1.0
0.4
2.5 4.25max
0.4
0.75
1 : Gate 2 : Drain 3 : Source SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
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Symbol VDSS VGSS ID IDP PD Tch Tstg
Conditions
Ratings --12 ±8 --2.5
Unit V V A A W W °C °C
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C
--10 1.0 3.