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2SJ628 - P-Channel Silicon MOSFET

Key Features

  • Package Dimensions unit : mm 2062A [2SJ628] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter www. DataSheet4U. com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --12 ±8 --2.5 Unit V V A A W W °C °C Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC.

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Datasheet Details

Part number 2SJ628
Manufacturer Sanyo Semicon
File Size 60.74 KB
Description P-Channel Silicon MOSFET
Datasheet download datasheet 2SJ628 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SJ628] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --12 ±8 --2.5 Unit V V A A W W °C °C Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C --10 1.0 3.