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2SC5666 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Package Dimensions.
  • Low noise : NF=1.3dB typ (f=2GHz). unit : mm High cutoff frequency : fT=8.5GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). 0.3 3 [2SC5666] 0.75 0.6 0.4 0.8 0.4 1.6 0 to 0.1 1 2 0.5 0.5 1.6 0.2 0.1 0.1max 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Vo.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7352 2SC5666 NPN Epitaxial Planar Silicon Transistor 2SC5666 UHF to S Band Low-Noise Amplifier and OSC Applications www.datasheet4u.com Features • • Package Dimensions • • Low noise : NF=1.3dB typ (f=2GHz). unit : mm High cutoff frequency : fT=8.5GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). 0.3 3 [2SC5666] 0.75 0.6 0.4 0.8 0.4 1.6 0 to 0.1 1 2 0.5 0.5 1.6 0.2 0.1 0.