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2SC5967 - NPN Triple Diffused Planar Silicon Transistor

Datasheet Summary

Features

  • Package Dimensions unit : mm 2048B [2SC5967] 6.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

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Datasheet Details

Part number 2SC5967
Manufacturer Sanyo Semiconductor Corporation
File Size 201.23 KB
Description NPN Triple Diffused Planar Silicon Transistor
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www.DataSheet4U.com Ordering number : ENN7614 2SC5967 NPN Triple Diffused Planar Silicon Transistor 2SC5967 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2048B [2SC5967] 6.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 2.8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL 5.45 5.
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