Datasheet4U Logo Datasheet4U.com

B1201 - 2SB1201

Key Features

  • Adoption of FBET, MBIT processes.
  • Large current capacity and wide ASO.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Package Dimensions unit:mm 2045B [2SB1201/2SD1801] unit:mm 2044B 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SB1201/2SD1801] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
B1201UA SLIC Protection Thyristors Littelfuse
B1201UC SIDACtor Protection Thyristors Littelfuse
B1201UC4 SIDACtor Protection Thyristors Littelfuse
B120 Low Voltage X-Ray Tube Ferranti
B120 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Diodes Incorporated

Other Datasheets by SANYO (now Panasonic)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller.