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CPH6602 - Ultrahigh-speed Switching

Key Features

  • Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2202 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. [CPH6602] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Tempe.

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www.DataSheet4U.com Ordering number : ENN7145 CPH6602 N-Channel Silicon MOSFET CPH6602 Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2202 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. [CPH6602] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions 0.7 0.9 0.2 3 0.95 0.