D1885
D1885 is NPN Triple Diffused Planar Silicon Transistor manufactured by SANYO.
Features
- High speed (tf=100ns).
- High breakdown voltage (VCBO=1500V).
- High reliability (Adoption of HVP process).
5.6 3.1
2.8 2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Conditions
Ratings 1500 800 6 6 20 3.0 60 150
- 55 to +150
Unit V V V A A W W
˚C ˚C
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Fall Time Symbol ICES ICBO VCE=1500V 800 1.0 5 1.5 8 5 0.1 10 0.3 µs Conditions Ratings min typ max 1.0 10 Unit m A µA V m A V V
VCB=800V, IE=0 VCEO(sus) IC=100m A, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=5A, IB=1.0A VBE(sat) h FE1 h FE2 tf IC=5A, IB=1.0A VCE=5V, IC=1A VCE=5V, IC=5A IC=4A, IB1=0.8A, IB2=- 1.6A
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor...
