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D1885 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High speed (tf=100ns).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (Adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C 5.45 5.45 1 : Bas.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
D1883 NPN Triple Diffused Planar Silicon Transistor
D1801 2SD1801
D1802 2SD1802
D1816 2SD1816
D1835 2SD1835

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2432A NPN Triple Diffused Planar Silicon Transistor www.DataSheet4U.com 2SD1885 Color TV Horizontal Deflection Output Applications Applications · Color TV horizontal diflection output. · Color display horizontal deflection output. Package Dimensions unit:mm 2039D [2SD1885] 3.4 16.0 5.0 8.0 Features · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C 5.45 5.