FTD2003 Datasheet | SANYO

Features - Low ON-state resistance. - 2.5V drive. - Mount height of 1.1mm. - plex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Marking : D2003 Switching Time Test Circuit VIN 4V 0V VIN PW=10µS D.C.≤1% D VDD=10V D2 ID=2.2A RL=4.5Ω VOUT 6.4 4.5 S2 S2 G2 0.65 8 7 6 5 3.0 0.95 0.425 unit VDSS VGSS ID IDP PD PT Tch Tstg 20 ±10 2.2 (8.8) 0.8 1.0 150 --55 to +150 min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1m A VDS=20V VGS=±8V VDS=10V VDS=10V ID=2.2A ID=0.5A VDS=10V VDS=10V VDS=10V , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=1m A ID=2.2A VGS=4V VGS=2.5V f=1MHz f=1MHz f=1MHz 20 10 ±10 1.3 5.5 100 130 170 90 43 10 38 30 26 9.5 1 1.5 1.0 130 180 V V A A W W °C °C typ max unit V µA µA V S mΩ mΩ p F p F p F ns ns ns ns n C n C n C V PW≤10µS, dutycycle≤1% Mounted on ceramic board (1000mm2 ! 0.8mm) 1unit Mounted on ceramic board (1000mm2 ! 0.8mm) 0.4 3.8 See Specified Test Circuit VDS=10V, VGS=10V, ID=2.2A IS=2.2A , VGS=0 Case Outline TSSOP8(unit:mm) Electrical Connection G 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 P.G 50Ω S 1 2 3 4 D1 S1 S1 G1 Specifications and information herein are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1...