K1332
K1332 is N-Channel Junction Silicon FET manufactured by SANYO.
eatures
- Ultrasmall-sized package permitting 2SK1332applied sets to be made smaller and slimmer.
1 2 0.65 0.65 2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions
1 : Source 2 : Drain 3 : Gate SANYO : MCP
Ratings 30
- 30 10 20 150 150
- 55 to +150
Unit V V m A m A m W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)GDS IG=- 10µA, VDS=0 IGSS VGS=- 20V, VDS=0 IDSS VGS(off) | yfs | VDS=10V, VGS=0V VDS=10V, ID=1µA VDS=10V, VGS=0V, f=1k Hz Conditions Ratings min
- 30
- 1.0 0.6-
- 0.2 2.5
- 0.7 5.0 6.0-
- 2.5 typ max Unit V n A m A V m S
- : The 2SK1332 is classified by IDSS as follows (unit : m A) :
0.6 2 1.5 1.2 3 3.0 2.5 4 6.0
Continued on next page.
(Note) Marking : V IDSS rank : 2, 3, 4
- For CP package version, use the 2SK303.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor pany
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