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K1332 - N-Channel Junction Silicon FET

Key Features

  • Ultrasmall-sized package permitting 2SK1332applied sets to be made smaller and slimmer. 0.15 0.425 1 2 0.65 0.65 2.0 0.3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions 1 : Source 2 : Drain 3 : Gate SANYO : MCP Ratings 30.
  • 30 10 20 150 150.
  • 55 to +150 Unit V V mA mA m.

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Ordering number:EN3137 N-Channel Junction Silicon FET www.DataSheet4U.com 2SK1332 Low-Frequency General-Purpose Amplifier Applications Applications · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Package Dimensions unit:mm 2058 [2SK1332] 0.425 0.2 0 to 0.1 0.6 0.9 0.3 3 2.1 1.250 Features · Ultrasmall-sized package permitting 2SK1332applied sets to be made smaller and slimmer. 0.15 0.425 1 2 0.65 0.65 2.0 0.