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K1470 - 2SK1470

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • Low-voltage drive. Package Dimensions unit:mm 2062A [2SK1470] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3771A www.DataSheet4U.com N-Channel Silicon MOSFET 2SK1470 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2062A [2SK1470] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2×0.8mm) 1 : Gate 2 : Drain 3 : Source SANYO : PCP Conditions Ratings 60 ±15 2 8 3.5 1.