Package Dimensions
unit : mm 2174
[TT2050]
16.0
5.0
High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 3.4
5.6 3.1
8.0 22.0
21.0
4.0
2.8 2.0 0.7
20.4
0.9
1
2
5.45
3
0.8
2.1
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Ratings 1500 800 5 12 25 3.0 Unit V V V A A W W °C °C
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Colle.
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Ordering number : ENN6674
TT2050
NPN Triple Diffused Planar Silicon Transistor
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TT2050
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
• • • • •
Package Dimensions
unit : mm 2174
[TT2050]
16.0
5.0
High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
3.4
5.6 3.1
8.0 22.0
21.0
4.0
2.8 2.0 0.7
20.4
0.9
1
2
5.45
3
0.8
2.1
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Ratings 1500 800 5 12 25 3.
TT2050 Datasheet
