High reliability (Adoption of HVP process). www. DataSheet4U. com
3.6
Package Dimensions
unit:mm 2010C
[2SC4572]
10.2 5.1 2.7 6.3 4.5 1.3
18.0
5.6
1.2
14.0
15.1
0.8
0.4
1
2
3 2.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VC.
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Ordering number:EN3252A
NPN Triple Diffused Planar Silicon Transistor
2SC4572
800V/20mA Switching Applications
Features
· High breakdown voltage. · Small Cob. · High reliability (Adoption of HVP process).
www.DataSheet4U.com
3.6
Package Dimensions
unit:mm 2010C
[2SC4572]
10.2 5.1 2.7 6.3 4.5 1.3
18.0
5.6
1.2
14.0
15.1
0.8
0.4
1
2
3 2.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.55
2.55
1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46
Ratings 800 800 7 20 60 1.