25FV101T
25FV101T is LE25FV101T manufactured by SANYO.
Description
Device Operation
The LE25FV101T is a 128K x 8 CMOS sector
Uerase, byte programmable serial Flash EEPROM. t4The LE25FV101T is manufactured using SANYO's proprietary, high performance CMOS Flash e EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better ereliability and manufacturability pared with conventional approaches. The LE25FV101T erases hand programs with a 3.3-volt only power supply. SLE25FV101T conforms to Serial Peripheral Interface
(S.P.I.). ta Featuring high performance programming, the a LE25FV101T typically byte programs in 35 µs. The
LE25FV101T typically sector (256 bytes) erases in
.D4ms. Both program and erase times can be optimized using interface feature such as Status Register to indicate the pletion of the write cycle. w To protect against an inadvertent write, the
LE25FV101T has on chip hardware data protection wscheme. Designed, manufactured, and tested for a wide spectrum of applications, the LE25FV101T is woffered with a guaranteed sector write endurance of mands are used to initiate the memory operation functions of the device. mands are written to the mand register through serial input (SI). The addresses and data of mands are latched to be used to operate functions such as Read, Sector_Erase, Byte_Program and so on.
Fig.3 and Fig.4 contain the timing waveforms of serial input and output. By setting CS to LOW, the device is selected. And mands, addresses, and dummy bits can be let in serially through SI port. When the device is in Read or Status Register Read mode, SO pin is in Low-impedance state. And the requested data can be read out from MSB (most significant bit) synchronously with the falling edge of SCK.
WP 1 Vcc 2
8 RESET 7 Vss
104 cycles. Data retention is rated greater than 10 myears. .co The LE25FV101T is best suited for applications
Uthat require re-programmable nonvolatile mass t4storage of program or data memory.
CS SCK
3 4
6 SO 5 SI
Figure1: Pin Assignment for 8-pin...
