Datasheet4U.com

2SA1209 Datasheet PDF

Sanyo Electric 2SA1209

The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Ratings (–)180 (–)160 (–)5 (–)140 (–)200 1 10 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C min 100* Ratings typ max Unit (–)0.1 µA (–)0.1 µA 400* 150 MHz (4.0)3.0 pF Continued on next page.
Part No. 2SA1209
Datasheet 2SA1209 Download
Manufacturer
Sanyo Electric
Description PNP/NPN Epitaxial Planar Silicon Transistors
Buy Stock & Price
2SA1209 datasheet page 1 preview

APPLICATIONS

FEATURES

● Adoption of FBET process.
● High breakdown voltage.
● Good linearity of hFE and small Cob.
● Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1209 Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Tc=25˚C 12 3 2.4 4.8 Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)80V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA Output Capacitance Cob VCB=(–)10V, f=1MHz *: Any and all SANYO products described or contained herein do not have specifications that can handle applications that requ...
2SA1209 page 2 preview 2SA1209 page 3 preview