Sanyo Electric 2SA1381
The 2SA1381/2SC3503 are classified by 10mA hFE as follows : 40 C 80 60 D 120 100 E 200 160 F 320 SANYO Electric Co.,Ltd.| Part No. | 2SA1381 |
|---|---|
| Datasheet | 2SA1381 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
Package Dimensions unit:mm 2009A [2SA1381/2SC3503]● High breakdown voltage : VCEO≥300V.
● Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
● Adoption of MBIT process. JEDEC : TO-126 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions B : Base C : Collector E : Emitter Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.2 Unit V V V mA mA W W Tc=25˚C Tj Tstg 7 150 –55 to +150 ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Vo...
