Sanyo Electric 2SA1436
PNP Epitaxial Planar Silicon Transistor
APPLICATIONS
APPLICATIONS
● AF amplifier, various drivers, muting circuit.FEATURES
● Adoption of MBIT process.● High DC current gain (hFE=500 to 1200).
● Large current capacity.
● Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
● High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1436] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg ConditionsELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage ICBO IEBO hFE1 hFE2 fT Cob VC...