Sanyo Electric 2SA1450
PNP/NPN Transistor
APPLICATIONS
FEATURES
● Adoption of FBET process.● AF amp, AF power amp.
● High breakdown voltage : VCEO>80V Package Dimensions unit:mm 2003B [2SA1450/2SC3708] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1450 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg ConditionsELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)60V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE1 hFE2 VCE=(–)5V, IC=(–)50mA VCE=(–)5V, IC=(–)400mA * : 2SA1450/2SC3708 are classified by 50mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 123 1.3 1.3 1 : Base 2 : Collector 3 : Emitter SANYO : NP Ratings (–)100 (–)80 (–)5 (–)500 (–)800 (–)100 600 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 100* 400* 60 Continued on next page.