Sanyo Electric 2SA1480
The 2SA1480/2SC3790 are classified by 10mA hFE as follows : Rank C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 123 2.4 4.8 1.7 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.5 7 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 40* 320* 150 MHz Continued on next page.| Part No. | 2SA1480 |
|---|---|
| Datasheet | 2SA1480 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage (VCEO≥300V).● Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP).
● Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.7 ( ) : 2SA1480 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)200V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)10V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)30V, IC=(–)10mA * : Any and all SANYO products described or contained herein do not have specifications that can handle ap...
