Sanyo Electric 2SA1831
PNP Triple Diffused Planar Silicon Transistors
APPLICATIONS
FEATURES
● High breakdown voltage (VCEO min=–800V).● Small Cob (Cob typ=1.6pF).
● High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=–800V, IE=0 VEB=–5V, IC=0 VCE=–5V, IC=–2mA VCE=–10V, IC=–2mA VCB=–100V, f=1MHz IC=–1mA, IB=–200µA IC=–1mA, IB=–200µA JEDEC : TO-220AB EIAJ : SC-46 E : Emitter C : Collector B : Base Ratings –800 –800 –7 –20 –60 1.75 150 –55...