Sanyo Electric 2SA2031
NPN Triple Diffused Planar Silicon Transistor
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2022A [2SA2031 / 2SC5669] 3.5 Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. 15.6 14.0 2.6 3.2 4.8 2.0 1.6 2.0 20.0 1.3 1.2 15.0 20.0 0.6 1.0 1 0.6 2 3 1.4 Specifications 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Note*( ) : 2SA2031
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (−)250 (−)230 (−)6 (−)15 (−)30 2.5 140 150 −55 to +150 Unit V V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE(1) hFE(2) Conditions VCB=(--)250V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)7.5A Ratings min typ max (--)0.1 (--)0.1 60 35 160 Unit mA mA Continued on next page.