Sanyo Electric 2SA2168
The 2SA2168 is classified by 100mA hFE as follows : Rank hFE S 140 to 280 T 200 to 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.| Part No. | 2SA2168 |
|---|---|
| Datasheet | 2SA2168 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
FEATURES
●● PNP Epitaxial Planar Silicon Transistor High-Voltage Switching
APPLICATIONS
Adoption of MBIT process. High breakdown voltage and large current capacity. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings --180 --160 --6 --1.5 --2.5 1.5 150 --55 to +150 Unit V V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg Data...
