Sanyo Electric 2SA2181
PNP Epitaxial Planar Silicon Transistor
APPLICATIONS
● 50V / 15A High-Speed SwitchingAPPLICATIONS
High-speed switching applications (switching regulator, driver circuit).FEATURES
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● Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --50 --50 --6 --15 --20 --3 2 25 150 --55 to +150 Unit V V V A A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=-40V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--330mA VCE=-2V, IC=--10A VCE=-10V, IC=--700mA VCB=-10V, f=1MHz Ratings min typ max --10 --10 200 50 120 140 MHz pF 500 Unit µA µA Continued on next page.