Sanyo Electric 2SB1274
The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows : Rank hFE Q 70 to 140 R 100 to 200 S 140 to 280 mA--45m --2.5 A --4 0m 2SB1274 --35 mA --30mA --25mA 50mA 45mA --3.0 IC -- VCE A 3.0 IC -- VCE mA A 30 25m mA mA 40 35 20mA 2SD1913 15mA 2.5 Collector Current, IC -- A --50 --2.0 Collector Current, IC -- A --20mA --15mA 2.0 10mA 1.5 --1.5 --10mA --1.0 --5mA 1.0 5mA --0.5 0.5 0 0 --1 --2 --3 --4 IB=0 --5 --6 IT02816 0 0 1 2 3 4 IB=0 5 6 IT02817 Collector-to-Emitter Voltage, VCE -- V --3.6 --3.2 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 3.6 3.2 IC -- VBE 2SB1274 VCE= --5V...| Part No. | 2SB1274 |
|---|---|
| Datasheet | 2SB1274 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● Package Dimensions unit : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplifier.FEATURES
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● 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 Conditions Ratings (−)60 (−)60 (−)6 (−)3 (−)8 2 20 150 −55 to +150 Unit V V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (-)100 (-)100 Unit µA µA Continued on next page.
