Sanyo Electric 2SC2911
PNP/NPN Epitaxial Planar Silicon Transistors
| Part No. | 2SC2911 |
|---|---|
| Datasheet | 2SC2911 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Adoption of FBET process.● High breakdown voltage.
● Good linearity of hFE and small Cob.
● Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1209 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C 12 3 2.4 4.8 Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)80V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA Output Capacitance Cob VCB=(–)10V, f=1MHz *: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 1.2 1 : Emitte...
