Sanyo Electric 2SC2999
The 2SC2999 are classified as follows according to hFE at 1mA : 40 C 80 60 D 120 100 E 200 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.| Part No. | 2SC2999 |
|---|---|
| Datasheet | 2SC2999 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● FBET series.● Very small-sized package permitting sets to be smallsized and slim.
● High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ). Package Dimensions unit:mm 2033 [2SC2999] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions B : Base C : Collector E : Emitter SANYO : SPA Ratings 25 20 3 30 150 125 –40 to +125 Unit V V V mA mW ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Base-to-Collector Time Constant Noise Figure Power Gain Symbol ICBO IEBO hFE fT Cre rbb'CC NF PG VCB=10V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=4mA VCB=6V, f=1MHz VCE=6V, IC=1mA, f=31.9MHz VCE=6V, IC=1mA, f=100MHz VCE=6V, IC=1mA, f=100MHz 40*...
