Sanyo Electric 2SC3042
the 2SC3042 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.| Part No. | 2SC3042 |
|---|---|
| Datasheet | 2SC3042 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage (VCBO≥500V).● Fast switching speed.
● Wide ASO. Package Dimensions unit:mm 2022A [2SC3042] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Tc=25˚C PW≤300µs, Duty Cycle≤10% 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Conditions Ratings 500 400 7 12 25 4 2.5 100 150 –55 to +150 Unit V V V A A A W W ˚C ˚C Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1.6A VCE=5V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A 15* 8 1.0 1.5 V V Conditions Ratings min typ max 10 10 50* Unit µA µA * : The hFE1 of the 2SC3042 is classified as follows.
