Sanyo Electric 2SC3083
the 2SC3083 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.| Part No. | 2SC3083 |
|---|---|
| Datasheet | 2SC3083 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage (VCBO≥500V).● Fast switching speed.
● Wide ASO. Package Dimensions unit:mm 2022A [2SC3083] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 500 400 7 6 12 2 2.5 60 Junction Temperature Tj 150 Storage Temperature Tstg –55 to +150ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A 10 10 15* 50* 8 1.0 1.5 * : The hFE1 of the 2SC3083 is classified as follows.
