Sanyo Electric 2SC3134
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● High VEBO.● Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base E : Emitter ( ) : 2SA1252 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions SANYO : CP Ratings (–)60 (–)50 (–)15 (–)150 (–)300 200 125 –55 to +125 Unit V V V mA mA mW ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCB=(–)40V, IE=0 VEB=(–)10V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA VCB=(–)6V...