Sanyo Electric 2SC3142
The 2SC3142 are classified as follows according to hFE at 1mA : (Note) Marking : J hFE rank : 2, 3, 4 40 2 80 60 3 120 C : Collector B : Base E : Emitter SANYO : CP Ratings 25 20 3 30 150 125 –40 to +125 Unit V V V mA mW ˚C ˚C Ratings min typ 40* 450 750 0.6 2.2 28 max 0.1 0.1 180* 0.9 19 Unit µA µA MHz pF ps dB dB 90 4 180 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be...| Part No. | 2SC3142 |
|---|---|
| Datasheet | 2SC3142 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● FBET series.● Compact package enabling compactness of sets.
● High fT and small cre (fT=750MHz typ, cre=0.6 typ). Package Dimensions unit:mm 2018A [2SC3142] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Feedback Capacitance Base-to-Collector Time Constant Noise Figure Power Gain ICBO IEBO hFE fT Cre rbb'CC NF PG VCB=10V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=4mA VCB=6V, f=1MHz VCE=6V, IC=1mA, f=31.9MHz VCE=6V, IC=1mA, f=100MHz VCE=6V, IC=1mA, f=100MHz * : The 2SC3142 are classified as follows according to hFE at 1mA : (Note) Marking : J hFE rank : 2, 3, 4 40 2 80 60 3 120 C : Collect...
