Sanyo Electric 2SC3143
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim.● High breakdown voltage (VCEO≥160V).
● Small output capacitance. Package Dimensions unit:mm 2018B [2SA1257/2SC3143] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 0.5 1 0.95 0.95 2 1.9 2.9 0.8 1.1 ( ) : 2SA1257 Specifications 1 : Base 2 : Emitter 3 : Collector SANYO : CP
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current Pulse Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)180 (–)160 (–)5 (–)80 (–)150 200 125 –55 to +125 Unit V V V mA mA mW ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)120V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)10mA * : The 2SA1257/2SC3143 are classified by 10mA hFE...