Sanyo Electric 2SC3383
PNP/NPN Epitaxial Planar Silicon Transistors
FEATURES
● Adoption of FBET process.● AF amp. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp
APPLICATIONS
Package Dimensions unit:mm 2003A [2SA1392/2SC3383] ( ) : 2SA1392 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C JEDEC : TO-92 EIAJ : SC-43 SANYO : NF Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)0.1mA VCE=(–)6V, IC=(–)10mA Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance VCE(sat) VBE(sat) Cob IC=(–)100mA, IB=(–)10mA IC=(–)100mA, IB=(–)10mA VCB=(–)6V, f=1MHz Collector-...