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2SC3392 Datasheet PDF

Sanyo Electric 2SC3392

PNP/NPN Epitaxial Planar Silicon Transistors

Part No. 2SC3392
Datasheet 2SC3392 Download
Manufacturer
Sanyo Electric
Description PNP/NPN Epitaxial Planar Silicon Transistors
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2SC3392 datasheet page 1 preview

APPLICATIONS

FEATURES

● Adoption of FBET process.
● High breakdown voltage : VCEO=(–)50V.
● Large current capacitiy and high fT.
● Very small-sized package permitting sets to be small- sized, slim. Package Dimensions unit:mm 2018A [2SA1338/2SC3392] Switching Time Test Circuit ( ) : 2SA1338 (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) Specifications C : Collector B : Base E : Emitter SANYO : CP

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)60 (–)50 (–)5 (–)500 (–)800 200 150 –55 to +150

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=...
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