Sanyo Electric 2SC3459
the 2SC3459 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.| Part No. | 2SC3459 |
|---|---|
| Datasheet | 2SC3459 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage and high reliability.● Fast switching speed (tf : 0.1µs typ).
● Wide ASO.
● Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3459] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C Ratings 1100 800 7 4.5 15 2 90 150 –55 to +150 Unit V V V A A A W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current ICBO VCB=800V, IE=0 Emitter Cutoff Current IEBO VEB=5V, IC=0 DC Current Gain hFE1 hFE2 VCE=5V, IC=0.3A VCE=5V, IC=1.5A 10* 8 Gain-Bandwidth Product fT VCE=10V, IC=0.3A Output Capacitance Cob VCB=10V, f=1MHz * : The hFE1 of the 2SC3459 is classified as follows.
