Sanyo Electric 2SC3495
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SC3495 |
|---|---|
| Datasheet | 2SC3495 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● AF amplifier, various driver, muting circuit.FEATURES
● Adoption of FBET process.● High DC current gain (hFE=500 to 2000).
● High breakdown voltage (VCEO≥100V).
● Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
● High VEBO (VEBO≥15V).
● Small Cob (Cob=1.8pF typ). Package Dimensions unit:mm 2003A [2SC3495] JEDEC : TO-92 EIAJ : SC-43 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg ConditionsELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE fT Cob VCB=80V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz B : Base C : Collector E : Emitter...
