Sanyo Electric 2SC3636
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC3636 |
|---|---|
| Datasheet | 2SC3636 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High reliability (Adoption of HVP process).● Fast speed.
● High breakdown voltage.
● Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C Conditions Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE tstg tf VCB=500V, IE=0 VCE=900V, RBE=0 IC=100mA, IB=0 VEB=5V, IC=0 IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=5V, IC=0.8A IC=4A, IB1=0.8A, IB2=–1.6A IC=4A, IB1=0.8A, IB2=–1.6A 1 : Base 2 : Collector 3 : Emitt...
