Sanyo Electric 2SC3770
The 2SC3770 is classified by 3mA hFE as follows : 40 2 80 60 3 120 100 4 200 (Note) Marking : JY hFE rank : 2, 3, 4 C : Collector B : Base E : Emitter SANYO : CP Ratings 30 20 3 30 10 250 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ 40* 0.6 1.2 0.7 0.6 15 max 1.0 10 200* Unit µA µA GHz pF pF dB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to...| Part No. | 2SC3770 |
|---|---|
| Datasheet | 2SC3770 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● UHF/VHF frequency converters, local oscillators, HF amplifiers.FEATURES
● High power gain : PG=15dB typ (f=0.4GHz).● High cutoff frequency : fT=1.2GHz typ. Package Dimensions unit:mm 2018A [2SC3770] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=20V, IE=0 Emitter Cutoff Current IEBO VEB=2V, IC=0 DC Current Gain hFE VCE=10V, IC=3mA Gain-Bandwidth Product fT VCE=10V, IC=3mA Output Capacitance Cob VCB=10V, f=1MHz Reverse Transfer Capacitance Cre VCB=10V, f=1MHz Power Gain PG VCE=10V, IC=5mA, f=0.4GHz * : The 2SC3770 is classified by 3mA hFE as follows : 40 2 80 60 3 120 100 4 200 (Note) Marking : JY hFE rank : 2, 3, 4 C : Co...
