Sanyo Electric 2SC3788
PNP/NPN Epitaxial Planar Silicon Transistors
| Part No. | 2SC3788 |
|---|---|
| Datasheet | 2SC3788 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage : VCEO≥200V.● Small reverse transfer capacitance and excellent high frequency cahaceteristic : Cre=1.2pF (NPN), 1.7pF (PNP).
● Adoption of FBET process. Package Dimensions unit:mm 2042A [2SA1478/2SC3788] ( ) : 2SA1478 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE fT Cob VCB=(–)150V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collecto...
