Sanyo Electric 2SC3792
NPN Epitaxial Planar Silicon Transistor
APPLICATIONS
APPLICATIONS
● Low frequency general-purpose amplifiers, drivers, muting circuits.FEATURES
● Adoption of FBET process.● High DC current gain.
● High VEBO (VEBO≥25V).
● High reverse hFE (150 typ).
● Small ON resistance [Ron=1Ω (IB=5mA)] Package Dimensions unit:mm 2003B [2SC3792] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg ConditionsELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE fT Cob VCB=40V, IE=0 VEB=20V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz 123 1.3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : NP Ratings 50 2...