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2SC3895 Datasheet PDF

Sanyo Electric 2SC3895

NPN Triple Diffused Planar Silicon Transistor

Part No. 2SC3895
Datasheet 2SC3895 Download
Manufacturer
Sanyo Electric
Description NPN Triple Diffused Planar Silicon Transistor
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2SC3895 datasheet page 1 preview

APPLICATIONS

FEATURES

● High speed (tf=100ns typ).
● High breakdown voltage (VCBO=1500V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3895] Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=5A, IB=1.2A IC=5A, IB=1.2A 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Ratings 1500 800 6 7 16 3.0 60 150 –55 to +150 Unit V V V A A W W ˚C ˚C R...
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