Sanyo Electric 2SC3996
Silicon NPN Transistor
| Part No. | 2SC3996 |
|---|---|
| Datasheet | 2SC3996 Download |
| Manufacturer |  Sanyo Electric |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High speed (tf=100ns typ).● High reliability (adoption of HVP process).
● High breakdown voltage (VCBO=1500V).
● Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3996] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE1 hFE2 tstg tf VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=12A, IB=3.0A IC=12A, IB=3.0A VCE=5V, IC=1.0A VCE=5V, IC=12A IC=8A, IB1=1.6A, IB2=–3.2A IC=8A,...
