Sanyo Electric 2SC4104
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● High fT.● Small reverse transfer capacitance.
● Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580/2SC4104] ( ) : 2SA1580 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Base-to-Collector Time Constant Output Capacitance Symbol Conditions ICBO IEBO hFE fT rbb',cc Cob VCB=(–)40V, IE=0 VEB=(–)3V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA VCB=(–)10V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)20mA, IB=(–)2mA Base-to-Emitter Saturation Voltage Collector-to-Base Brea...