Sanyo Electric 2SC4160
the 2SC4160 is classified as follows. When specifying the hFE1 rank, specify two or more ranks in principle.| Part No. | 2SC4160 |
|---|---|
| Datasheet | 2SC4160 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage.● High reliability.
● Fast switching speed (tf=0.1µs typ).
● Wide ASO.
● Adoption of MBIT process.
● Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4160] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Ratings 500 400 7 4 Unit V V V A A A W W PW≤300µs, duty cycle≤10% 8 1.5 2 Tc=25˚C 25 150 –55 to +150 ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1* hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A VCE=5V, IC=10mA 15 10 10 Conditions Ratings min typ max 10 10 50 Unit µA µA * : The hFE1 of the 2SC4160 is classified as follows.
