Sanyo Electric 2SC4172
the 2SC4172 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.| Part No. | 2SC4172 |
|---|---|
| Datasheet | 2SC4172 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage (VCBO≥800V).● Fast switching speed.
● Wide ASO.
● Suitable for sets whose height is restricted. Package Dimensions unit:mm 2049C [2SC4172] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 20.9 11.5 1.2 9.4 0.8 0.4 Specifications 123 2.55 2.55 2.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220MF
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C Ratings 800 500 7 5 10 2 1.65 50 150 –55 to +150 Unit V V V A A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 hFE2 VCB=500V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.6A VCE=5V, IC=3A 15* 8 * : The hFE1 of the 2SC4172 is classified as follows.
