Sanyo Electric 2SC4204
NPN Epitaxial Planar Silicon Transistor
APPLICATIONS
APPLICATIONS
● AF amplifier, various drivers. Package Dimensions unit:mm 2003B [2SC4204] 5.0 4.0 4.0FEATURES
● Adoption of MBIT process.● High DC current gain (hFE=800 to 3200).
● Large current capacity (IC=0.7A).
● Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
● High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Ratings 30 25 15 0.7 1.5 0.6 150 –55 to +150 Unit V V V A A W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Volta...